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| PNP Silicon Switching Transistor High current gain: 0.1 mA to 100 mA q Low collector-emitter saturation voltage q SMBT 4126 Type SMBT 4126 Marking sC3 Ordering Code (tape and reel) Q68000-A8549 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation, TS = 71 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS Symbol VCE0 VCB0 VEB0 IC Ptot Tj Tstg Values 25 25 4 200 330 150 - 65 ... + 150 Unit V mA mW C 310 240 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 SMBT 4126 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA Collector-base breakdown voltage IC = 10 A Emitter-base breakdown voltage IE = 10 A Collector-base cutoff current VCB = 20 V, IE = 0 Emitter-base cutoff current VEB = 3 V, IC = 0 DC current gain IC = 2 mA, VCE = 1 V IC = 50 mA, VCE = 1 V Collector-emitter saturation voltage1) IC = 50 mA, IB = 5 mA Base-emitter saturation voltage1) IC = 50 mA, IB = 5 mA AC characteristics Transition frequency IC = 10 mA, VCE = 20 V, f = 100 MHz Output capacitance VCB = 5 V, f = 1 MHz Input capacitance VEB = 0.5 V, f = 1 MHz Small-signal current gain IC = 1 mA, VCE = 5 V, f = 1 kHz Noise figure IC = 0.1 mA, VCE = 5 V, f = 10 Hz to 15 kHz RS = 1 k fT Cobo Cibo hfe NF 250 - - 120 - - - - - - - 4.5 10 480 4 - dB MHz pF V(BR)CE0 V(BR)CB0 V(BR)EB0 ICB0 IEB0 hFE 120 60 VCEsat VBEsat - - - - - - 360 - 0.4 0.95 V 25 25 4 - - - - - - - - - - 50 50 - nA V Values typ. max. Unit 1) Pulse test conditions: t 300 s, D 2 %. Semiconductor Group 2 SMBT 4126 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Saturation voltage IC = f (VBE sat, VCE sat) Permissible pulse load Ptot max / Ptot DC = f (tp) DC current gain hFE = f (IC) VCE = 1 V, normalized Semiconductor Group 3 SMBT 4126 Small-signal current gain hfe = f (IC) VCE = 10 V, f = 1 MHz Semiconductor Group 4 |
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